The multi-line cutting process of gallium lanthanum tantalum crystal includes the following steps: check the cutting line of the multi-line cutting machine and adjust the distance between the cutting lines, debug the multi-line cutting machine, and fix the gallium lanthanum tantalum crystal to the working table of the multi-line cutting machine; A multi-wire cutting machine was used to cut gallium lanthanum tantalum crystals, and the table was lowered to 1-2mm above the diamond wire network plane. Then the cutting fluid pump, swing and table were started in turn to cut gallium lanthanum tantalum wafers. Put the cut crude gallium lanthanum tantalum wafers into the lye and heat it to separate the crude gallium lanthanum tantalum wafers from the glue. Then, the raw gallium lanthanum tantalum wafers can be obtained by ultrasonic cleaning and drying. This method uses a multi-line cutter to cut the crystal directly. The operation is simple, the chip surface obtained by cutting has no obvious scratches, the warpage degree is small, and the thickness of the chip is uniform, which is conducive to the grinding and polishing of the wafer in the next step.
The crystal processing process mainly includes orientation, cutting rod, slicing, grinding, polishing and other steps, among which slicing plays a crucial role in the whole processing process. The quality of slice determines the time of grinding and polishing and the loss of wafer, which plays an important role in improving the yield.
Now people generally use multi-line cutting machine for crystal cutting, compared with the single line cutting machine, it has many advantages, such as small surface damage, small slit loss, large processing amount, high cutting efficiency, good slice quality and low running cost. The quality of slicing depends largely on the setting of basic technological parameters of multi-line cutting machine, so reasonable and reliable basic technological parameters are very key for multi-line cutting.
Put the cut crude gallium lanthanum tantalum wafers into the lye of pH11 and heat them to separate the crude gallium lanthanum tantalum wafers from the glue. Then, ultrasonic cleaning and drying are performed to obtain gallium lanthanum tantalum wafers. The thickness of the cut wafers is 20 mm, there are no obvious cut marks on the surface of the wafers, and the warping degree of each slice is small.
