CoCrPt alloy sputtering target and film and preparation method, the CoCrPt alloy sputtering target comprises B element, the content of B element is 0 ~ 20 atomic percentage, the alloy target comprises Co phase and B phase two phases, wherein B phase is evenly distributed in the Co phase. The average grain size of the Co rich phase is 20-50 μm, and the average grain size of the B rich phase is 0-20 μm. The preparation method of the CoCrPt alloy sputtering target includes: (1) vacuum melting; (2) hot isostatic pressure; (3) thermal mechanical processing; (4) cold machining. Magnetic recording medium prepared by using CoCrPt alloy sputtering target material of the invention comprises a base layer, a bonding layer, a soft magnetic layer, an intermediate layer and a magnetic recording layer. The coercivity of the magnetic recording medium is 3000 ~ 5000Oe and the square degree is 0.80 ~ 095. The chemical composition of the invention is uniform and the deviation from the nominal composition is small, which solves the technical problems of rolling cracking, low yield, large deviation from the nominal composition of the alloy target chemical composition and higher content of harmful impurities in the conventional preparation process.
CoCrPtB alloy sputtering target and its preparation method are mainly prepared by powder metallurgy alloy target, the mechanical properties of the prepared alloy target such as elongation and fracture characteristics have been improved, but because the powder metallurgy method needs to go through the powder, ball milling and other processes, and finally through the vacuum hot pressing or hot isostatic pressing pressing. Therefore, compared with the smelting method, there are the following defects: (1) the uniformity of chemical composition is poor; (2) the gas content of the target material is high, resulting in lower density than that of the target prepared by melting method; (3) In order to uniform components to carry out a long time of ball milling mixing treatment, easy to introduce impurities. The above shortcomings eventually lead to poor composition uniformity of the film, film thickness uniformity is poor, the film is easy to produce defects and other adverse effects, ultimately affecting the magnetic properties of the film.
Based on the above problems, the inventor proposed a CoCrPtB alloy sputtering target and its preparation method, which has uniform chemical composition and smaller nominal composition, fine and even grain size and low impurity content. The method not only ensures uniform chemical composition and low impurity content of the above products, but also improves product yield. At the same time, a magnetic recording medium prepared by the target material is also provided. The magnetic recording layer surface of the magnetic recording medium has fine and uniform particles, high coercivity and good square degree.
