At present, the main methods for preparing target materials are casting and powder metallurgy.
Casting method: The alloy raw materials with a certain proportion of composition are smelted, and then the alloy solution is poured into the mold to form the ingot, and finally the target material is machined. The casting method is smelted and cast in vacuum. The commonly used melting methods include vacuum induction melting, vacuum arc melting and vacuum electron bombardment melting, etc., which have the advantages of low impurity content (especially gas impurity content), high density and large scale. The disadvantage is that for two or more kinds of metals with large difference in melting point and density, it is difficult to obtain uniform alloy target material by ordinary melting method.
Powder metallurgy method: the alloy raw materials with a certain proportion of composition are smelted, poured into ingot and then crushed, the powder formed by grinding is formed by isostatic pressing, and then sintered at high temperature to form the target material. Its advantage is that the target material composition is uniform; The disadvantages are low density and high impurity content. The commonly used powder metallurgy processes include cold pressing, vacuum hot pressing and hot isostatic pressing.
Semiconductor associated target:
Electrode, wiring film: aluminum target, copper target, gold target, silver target, palladium target, platinum target, aluminum silicon alloy target, aluminum silicon copper alloy target, etc.
Storage electrode film: molybdenum target, tungsten target, titanium target, etc.
Adhesive film: tungsten target, titanium target, etc.
Capacitor insulation film: lead zirconate titanate target, etc.
Display target material:
Transparent conductive film: indium tin oxide target material, zinc oxide aluminum target material, etc.
Electrode wiring film: molybdenum target, tungsten target, titanium target, tantalum target, chromium target, aluminum target, aluminum titanium alloy target, aluminum tantalum alloy target, etc.
Electroluminescent film: zinc sulfide manganese doped target, zinc sulfide terbium doped target, calcium sulfide europium doped target, yttrium oxide target, tantalum oxide target, barium titanate target, etc.
Other application targets:
Decorative film: titanium target, zirconium target, chromium target, titanium alloy target, stainless steel target, etc.
Low resistance film: nichrome alloy target, nichrome silicon alloy target, nichrome aluminum alloy target, nichrome copper alloy target, etc.
Superconducting thin films: ybCO target, bismuth strontium calcium copper oxygen target, etc.
