The invention relates to semiconductor tantalum target material and forging method thereof. Tantalum ingots were upset and drawn under the condition that the deformation amount was 20% ~ 40% and the single deformation amount was controlled to ≤ 10%, and then pickled. The pickled tantalum ingots were subjected to the first vacuum heat treatment at 1250 ~ 1400℃. The second vacuum heat treatment was carried out at 950 ~ 1150℃ after repeated upsetting and pickling. The semiconductor tantalum target is obtained by repeating upsetting and lengthening, pickling and vacuum heat treatment at 950 ~ 1150℃ for two times. The invention compacts the loose structure, welds the microscopic holes and increases the density of the tantalum target by means of four upsetting and elongating forging methods and adopting reasonable multi-pass small deformation amount. The average grain of the obtained semiconductor tantalum target is between 50 and 70μm.
Tantalum target and tantalum target assembly manufacturing method, the method of hot forging tantalum ingot (air furnace heating to 850-950℃), deformation rate of 70-80%; Repeat the stretch forging and compression forging steps 2 ~ 4 times. Because the temperature of tantalum metal is too high in the air, it is easy to oxidize, and CHO intrusions into the material, resulting in material embrittlement, which has an irreversible impact on both forging and subsequent rolling, and leads to an increase in the content of tantalum target gas elements, a decrease in purity, and a decrease in the yield.
To sum up, the grain orientation control technology is very important in the manufacturing process of high purity tantalum target for semiconductor, and the forging process is even more critical. It is significant to develop a semiconductor tantalum target with uniform microstructure and reasonable proportion of texture and its forging method.
Aiming at the shortcomings and shortcomings of the prior art, the invention mainly aims to provide a forging method for semiconductor tantalum target material. The method through forging mode, shape variable and annealing process cooperate with each other, break the coarse columnar crystal, and support the heat treatment process at different stages to obtain uniform fine microstructure; The loose structure is compacted, the micro holes are welded, and the reasonable proportion of texture is controlled.
