The Ta10W alloy product after hot isostatic pressing was machined by lathe to remove the titanium jacket, and cleaned with metal cleaning agent and dried moisture. The dried Ta10W alloy products were placed in a tungsten crucible, and the Ta10W alloy products were buried completely with sponge zirconium of grade HZr-01 with a particle size of 3mm ~ 8mm. The whole Ta10W alloy products were put into a vacuum furnace for a heat treatment, and the sponge zirconium was removed after cooling to room temperature. Then the Ta10W alloy products together with tungsten crucible are put into the vacuum furnace for secondary heat treatment, and the furnace is cooled to below 80℃ to obtain Ta10W alloy.
The system of the primary heat treatment is: under the condition of a vacuum degree of 5.0×10-1 ~ 5×10-3Pa, it is heated from room temperature to 1350℃ within 1.5h and kept warm for 2h, and then cooled with the furnace; The system of secondary heat treatment is: under the condition of vacuum degree of 5.0×10-2 ~ 5×10-4Pa, it is heated from room temperature to 2180℃ within 2.5h and kept for 2h, and then cooled with the furnace;
The vacuum furnace is a high temperature vacuum annealing furnace, and adopts tungsten wire mesh as a heating body, and adopts molybdenum sheet, tantalum sheet or tungsten sheet as a crucible and heat shield. In this embodiment, the oxygen mass content of Ta12W alloy obtained after two-step heat treatment is significantly lower than that of Ta12W alloy products after hot isostatic pressing, and the strength including tensile strength and yield strength are significantly increased, and the elongation and end shrinkage are both increased, indicating that the method in this embodiment can improve the strength of powder metallurgy high tungstan-tantalum alloy by sintering forming. It also greatly improves its plasticity.
The above is only a better embodiment of the invention and does not place any limitation on the invention. Any simple modification, alteration and equivalent change made to the above embodiments according to the technical substance of the invention shall still fall within the scope of protection of the technical scheme of the invention.
