Tantalum nitride chip type thin film resistor comprises an insulating substrate, two surface electrodes and two back electrodes respectively arranged on the surface and back of the insulating substrate, and an end electrode connected with the surface electrode and the back electrode at both ends of the insulating substrate, the surface of the surface electrode, the back electrode and the end electrode are covered with an intermediate electrode, and the surface of the intermediate electrode is covered with an external electrode. A resistance layer is arranged between two meter electrodes and is connected with the meter electrode. The surface of the resistance layer is covered with an insulating cladding layer; The resistance layer is a tantalum nitride film; The tantalum nitride chip type thin film resistor of the invention has the characteristics of high precision, small resistance temperature coefficient, moisture resistance, high stability and good high-frequency performance, etc. Compared with other thin films, tantalum nitride thin film has the advantages of higher stability, lower resistance temperature coefficient and can be applied under more severe natural conditions, etc. Therefore, high-power tantalum nitride film resistors can bring higher economic benefits.
Tantalum nitride film is used in the manufacture of thin film hybrid integrated circuits because of its excellent performance. Tantalum nitride film is a stable resistance film with good electrical properties, such as TaN and Ta2N with low temperature coefficient. At the same time, TaN film is also a good diffusion barrier film. Therefore, it is widely used in semiconductor integrated circuits and composite metal oxide semiconductors as diffusion barrier materials. TaN film resistors have a very wide range of application values in thin film processes and embedded passive components of multi-chip components, but the application of tantalum nitride films in high-power thin film chip resistors has not been reported.
Tantalum nitride chip type thin film resistor comprises an insulating substrate, two surface electrodes and two back electrodes respectively arranged on the surface and back of the insulating substrate, and an end electrode connected with the surface electrode and the back electrode at both ends of the insulating substrate, the surface of the surface electrode, the back electrode and the end electrode are covered with an intermediate electrode, and the surface of the intermediate electrode is covered with an external electrode. A resistance layer is arranged between two meter electrodes and is connected with the meter electrode. The surface of the resistance layer is covered with an insulating cladding layer; The resistance layer is a tantalum nitride film.
