Sputtering targets are used in many fields such as electronics, corrosion-resistant materials and decoration, catalysts, cutting and grinding equipment and abrasion-resistant materials for the formation of covering films for metal and ceramic materials.
The sputtering method itself is already a widely recognized method in the above fields, but recently, especially in the field of electronics, such a tantalum sputtering target is required, which is suitable for the formation of complex shape covering films and the formation of loops.
Generally speaking, the tantalum target is the blank and billet composed of the tantalum raw material by electron beam melting and casting are repeatedly hot forged and annealed (heat treatment), and then rolled and finally (mechanical, grinding, etc.) processed into the target.
In this manufacturing process, the hot forging of the billet and billet destroys the cast structure, causing the porosity and segregation to diffuse and disappear, and it is recrystallized by heat treatment, relying on increasing the densification and strength of the tissue for manufacturing.
In general, the billets and billets cast by fusion have a crystal particle size of more than 50mm. Moreover, through hot forging and recrystallization annealing of billets and billets, the casting structure is destroyed, and roughly uniform and fine (less than 100μm) crystal particles can be obtained.
On the one hand, when sputtering with such a manufactured target, it is generally believed that the recrystallization structure of the target is more fine and uniform, in addition, uniform film formation can be carried out in the same direction as the crystallization orientation, rarely generate arc and particles, and a film with stable characteristics can be obtained.
Compared with the previous target with the same crystal orientation, the film forming speed is increased, the film uniformity is good, in addition, few electric arcs and particles are produced, and the tantalum sputtering target with superior film forming characteristics is obtained. In order to solve the above problems, the structure of the target is improved. By making the crystal orientation irregular, a tantalum sputtering target with better film forming characteristics can be obtained. Compared with the previous target whose crystal orientation is consistent with the target surface, it has excellent results. It can be made into a tantalum sputtering target with fast film forming speed, good film uniformity, no arc and particles, good film forming characteristics, and good target utilization rate.
