Some components in an integrated circuit have components made up of layers, including molybdenum (Mo), titanium tungsten (TiW), and aluminum nitride (AlN). One such device is a volume sound wave (BAW) device with a stack of layers of molybdenum, titanium tungsten and aluminum nitride. Aluminum nitride forms an acoustic resonator in which the molybdenum layer is used as an electrical contact or electrode on the acoustic resonator. Titanium tungsten layers and oxides are formed on each side of the acoustic resonator to form Bragg mirrors.
In the described example, a terminationangle formation method for a terminationangle ina terminationangle layer of ti-w involves supplying the terminationangle layer and applying photoresist/photoresist material to the terminationangle layer. Photoresist materials were exposed to defocus to form resistmask. The exposed edge of the photoresist material corresponds to the tilted end. Etching titanium and tungsten layers using etching materials. Etching material etches at least part of the photoresist material exposed under defocusing conditions. Etching results in an inclined end in the titanium tungsten layer. It is a lateral sectional view of a volume acoustic device based on piezoelectric aluminum nitride. Figure 2 is an extended view of the molybdenum terminal in figure 1. Extended view of another molybdenum terminal. Figure 4 is a side view of the device in the manufacturing process. Figure 5 is a side view of the device after the photolithographic step has been applied and the residues of the photoinduced etching layer have been removed. Is the etched view of the device in figure 5. FIG. 7 is a flowchart describing a method for manufacturing titanium tungsten layers. Figure 8 is an example of an aluminum-nitride piezoelectric (BAW) device similar to the device shown in figure 1, but the aluminum-nitride piezoelectric (BAW) device is made of a multilayer consisting of a titanium tungsten layer manufactured according to the technique description. Specific embodiments are described in this paper for fabrication of components on an integrated circuit by means of a multilayer stack comprising a titanium tungsten layer. Conventional devices with a ti-w layer in the stack are prone to fracture and joint generation at the end of the ti-w layer.
A method for forming a terminal Angle in a titanium tungsten layer in a semiconductor comprises: providing a titanium tungsten layer; The photoinduced anti-etching material is applied to the titanium tungsten layer; Exposing the photoresist material under defocusing conditions to generate an etching resistant mask having an edge part; And etching the titanium-tungsten layer at least at the edge part of the etch-resistant mask to produce an inclined terminal of the titanium-tungsten layer.
