Magnetron sputtering is a new physical vapor deposition method, which has many advantages over the earlier evaporation deposition method. As a mature technique, magnetron sputtering has been applied in many fields.
Magnetron sputtering principle: an orthogonal magnetic field and electric field are added between the sputtering target pole (cathode) and anode, and the required inert gas (usually Ar gas) is filled in a high vacuum chamber. The permanent magnet forms a 250 ~ 350 gaussian magnetic field on the surface of the target material, and the orthogonal electromagnetic field is composed of the high voltage electric field. Under the action of electric field, Ar gas ionization into positive ions and electrons, target and has certain negative pressure, from the action of the target from the extremely affected by magnetic field and increase of working gas ionization probability, form a high density plasma near the cathode, Ar ion under the action of lorentz force, speed up to fly to the target surface, bombarding target surface at a high speed, the target is follow the principle of momentum transfer atoms sputtering out by higher kinetic energy from the target surface to substrate deposition film. Magnetron sputtering is generally divided into two types: tributary sputtering and radio frequency sputtering. The principle of tributary sputtering equipment is simple, and its rate is fast when sputtering metal. And rf sputtering is more widely used, in addition to sputtering conductive materials, but also sputtering non-conductive materials, at the same time, also sputtering reactive preparation of oxides, nitride and carbides and other compound materials. If the frequency of radio frequency is increased, it will become microwave plasma sputtering. Currently, the commonly used type of microwave plasma sputtering is electron cyclotron resonance (ECR).
Metal sputtering target material, coating alloy sputtering coating material, ceramic sputtering coating material, boride ceramic sputtering target materials, carbide ceramic sputtering target material, fluoride ceramic sputtering target material, nitride ceramic sputtering target materials, oxide ceramic target, selenide ceramic sputtering target material, silicide ceramic sputtering target materials, sulfide ceramic sputtering target material, telluride ceramic sputtering target material, other ceramic material, a silicon oxide ceramic target material doped chromium (Cr) - the SiO), indium phosphide (InP) target material, arsenic lead target material (PbAs), indium arsenide target material (InAs).
