Sputtering target is mainly used in electronics and information industry, such as integrated circuit, information storage, liquid crystal display, laser memory, electronic control devices, etc. It can also be used in the field of glass coating. It can also be used in wear-resistant materials, high temperature corrosion resistant, high - grade decorative products and other industries.
According to the shape can be divided into square target, round target and heterogeneous target. According to the composition can be divided into metal target material, alloy target material, ceramic compound target material. According to different applications, it can be divided into semiconductor associated ceramic target material, recording medium ceramic target material, display ceramic target material, superconducting ceramic target material and giant magnetic resistance ceramic target material.
According to the application domain is divided into microelectronics target material, magnetic recording material, CD target materials, precious metal target material, film resistance target material, conductive membrane material, the surface modification of target, the mask layer target material, decorative material, electrode material, packaging material and other material.
Magnetron sputtering principle: in the sputtering target pole (cathode) between the anode and an orthogonal magnetic and electric fields, in the high vacuum chamber by filling the need of inert gas (usually the Ar gas), a permanent magnet in the target material surface form 250 ~ 350 gauss magnetic field, with high voltage electric field of orthogonal electromagnetic field. Under the action of electric field, Ar gas ionization into positive ions and electrons, target and has certain negative pressure, from the action of the target from the extremely affected by magnetic field and increase of working gas ionization probability, form a high density plasma near the cathode, Ar ion under the action of lorentz force, speed up to fly to the target surface, bombarding target surface at a high speed, the target is follow the principle of momentum transfer atoms sputtering out by higher kinetic energy from the target surface to substrate deposition film. Magnetron sputtering is generally divided into two types: branch sputtering and radio frequency sputtering, in which branch sputtering equipment is simple in principle and its speed is fast when sputtering metal. Rf sputtering and the use of more extensive, besides can splash conductive material, can also be sputtering of conductive materials, as well as department of reaction sputtering chemical compounds such as preparation of oxide, nitride and carbide materials. If the frequency of radio frequency increases, it will become microwave plasma sputtering.
