Tantalum ring and preparation method, sputtering device containing tantalum ring and its application, the tantalum ring comprises a ring and a pattern arranged on the surface of the ring, the pattern is conical pit shape; Pits of conical shaped pattern has a larger specific surface area, when used for sputtering process, able to attach a lot of sputtering source, and has good adhesion, moreover pattern presents the pits of cone shape, the top of the conical pits toward inside the ring, the adjacent two cone connected to the bottom of the pit, presents the plane shape of structure, rather than with a sophisticated structure, Therefore, it can avoid the phenomenon of tip discharge in the process of electrification, thus increasing the service life of tantalum ring. The preparation method of tantalum ring is simple, only need knurling treatment, no need for surface sharpening treatment, that is, to ensure that the obtained tantalum ring has good adsorption capacity and adsorption capacity of sputtering source, there will be no tip discharge.
Tungsten (W) and W-base alloys are the competitive candidates for plasma materials in future fusion reactors. Among these materials, tungsten-tantalum alloys receive the most attention. Molecular dynamics simulations were used to investigate the displacement cascade of pure W and W-Ta alloy systems with recoil energies up to 100 keV at 300 K and the further evolution of cascade defects at 1,000 K. Effects of tantalum concentration on formation The evolution of defects produced by major atomic energies is quantitatively analyzed. The results of this study suggest that the presence of randomly distributed Ta atoms does not significantly affect the average number of surviving Frenkel pairs or the fraction of cluster vacancies and gaps. In addition, none of the cascaded systems had a complete vacancy dislocation ring. The resulting dislocation rings are mainly 1/2 rings, accompanied by a small number of rings and mixed rings. However, the presence of Ta atoms slows down the defect movement, and the defect mobility decreases with the increase of Ta concentration in block W. This affects the size and density of the defect. In addition, the presence of Ta also inhibits the transition from dislocation ring to 1/2 dislocation ring at high temperature. This will affect the type of dislocation ring and material properties. The presence of Ta atoms slows down the defect movement, and the defect mobility decreases with the increase of Ta concentration in block W. This affects the size and density of the defect. In addition, the presence of Ta also inhibits the transition from dislocation ring to 1/2 dislocation ring at high temperature. This will affect the type of dislocation ring and material properties. The presence of Ta atoms slows down the defect movement, and the defect mobility decreases with the increase of Ta concentration in block W. This affects the size and density of the defect. In addition, the presence of Ta also inhibits the transition from dislocation ring to 1/2 dislocation ring at high temperature. This will affect the type of dislocation ring and material properties.
