The invention relates to a preparation method of cobalt-tantalum-zirconium alloy target and its application, belonging to the technical field of preparation of special materials, and the preparation method includes: Through the composition design, high vacuum sintered + high vacuum electron beam melting, the three dimensional isothermal forging breakdown and variable Angle control rolling technology and so on, to control the structure of the alloy and the performance of target, the preparation of the high quality of cobalt, tantalum zirconium alloy material, the cobalt, tantalum zirconium alloy material of oxygen content of 15 PPM or less, the average grain size was 5 ~ 20 microns, uniform phase distribution in the target material, Permeability is greater than 40% and permeability non-uniformity is less than 2%. The process designed by the invention can effectively control the oxygen content, uniformity of microstructure and magnetic properties of the finished target material, which provides the guarantee of raw materials for sputtering high-quality thin films.
Cobalt-based alloy thin film material has the characteristics of high permeability, high saturation magnetization, high resistivity, high cutoff frequency, low coercivity, etc. It is the ideal raw material for micro inductance devices and magnetic recording components. Cobalt-tantalum-zirconium alloy is an important soft magnetic material with good magnetization characteristics. It is one of the important raw materials for magnetic recording materials in the new generation of information technology industry. However, due to its high permeability, in the magnetron sputtering process, serious magnetic shielding makes the magnetic field passing through the target surface less, magnetron sputtering is difficult to proceed smoothly, greatly reducing the efficiency and quality of sputtering film.
The film forming quality of magnetron sputtering is closely related to the target material of raw materials, mainly reflected in the purity, density, composition and structure uniformity of raw materials and grain size. The purity of the target material directly affects the continuity and uniformity of the film. The lower the impurity content, the better the quality of magnetron sputtering film. The high density target has low sputtering power, high film forming rate, long service life and good film forming quality. The uniformity of microstructure and structure of target material is the key to film forming quality. The grain size is about fine, and the faster the sputtering speed, the thickness distribution of the film after sputtering is about uniform.
Due to the weak bond between the dense rows, the atoms in the target are most easily sputtered along the direction of the dense rows. Therefore, selecting a specific texture orientation can improve the magnetic properties of the high purity cobalt tantalum-zirconium target. At present, there is still a lack of effective control on the grain distribution and phase structure distribution of cobalt-tantalum-zirconium target materials, which is not conducive to the use efficiency and sputtering film performance of target materials. Magnetic permeability is an important index to evaluate the sputtering performance of the target. Magnetic target with high permeability can concentrate the magnetic field in the target as much as possible to make the glow process more stable. Therefore, improving the permeability of the vertical target can improve the sputtering film performance under vacuum.
