The invention relates to a preparation process of sputtering tantalum ring, the process is as follows: Article first preparation of ring with tantalum, roll round after welding on both ends of the article will tantalum, heat treatment, plastic, knurling both inside and outside surface, cut off the joint, to end the knurling, then in the processing and welding groove on the surface of the ring, pickling, convex welding in the welding groove on the surface of the ring, again pickling, sand blasting in the area of the rules, the use of ultrasonic cleaning. The performance indexes of sputtering tantalum ring prepared by the invention meet the application requirements of semiconductor industry.
Physical vapor deposition (PVD) is one of the most critical processes in the production of semiconductor chips. Its purpose is to deposit metal or metal compounds on silicon wafers or other substrates in the form of thin films, and then through the cooperation of photography and corrosion and other processes, finally forming the complex wiring structure in semiconductor chips. Physical vapor deposition is accomplished by sputtering machine, and sputtering tantalum ring is one of the key consumables used in the above process.
The invention relates to a preparation process of sputtering tantalum ring, characterized in that the process is as follows: Article first preparation of ring with tantalum, roll round after welding on both ends of the article will tantalum, heat treatment, plastic, knurling both inside and outside surface, cut off the joint, to end the knurling, then in the processing and welding groove on the surface of the ring, pickling, convex welding in the welding groove on the surface of the ring, again pickling, sand blasting, in the area of the rules the use of ultrasonic cleaning;
The preparation process of tantalum strip is as follows: firstly, the tantalum material is forged by square beating and then flat beating. Then, the tantalum material is heat treated for 60min ~ 120min at the temperature of 1000°C ~ 1100°C, and the second heat treatment is conducted for 60min ~ 120min at the temperature of 1000°C ~ 1100°C. The finished product is rolled by one-way rolling. Finally, the third heat treatment is carried out at the temperature of 1200°C ~ 1400°C for 120min ~ 180min. After leveling, the material can be obtained.
Using the way of first beating square and then beating flat forging, the total processing rate of 65% ~ 75%; The first heat treatment was conducted at 1000°C ~ IlOO0C for 60min ~ 120min; The total processing rate is 70% ~ 80% by reversing rolling. The second heat treatment is conducted at the temperature of 1000°C ~ 1100°C for 60min ~ 120min; Unidirectional rolling method is adopted for finished product rolling, and the total processing rate is 70% ~ 80%. The third heat treatment is 120min ~ ISOmin at 1200°C ~ 1400°C; Leveling and blanking, tantalum strip is prepared.
