The manufacturing method of titanium target material includes selecting titanium raw material, melting the titanium raw material, and casting the molten soup, the molten soup after casting is cooled to form the ingot blank; Immediately after the first heat treatment, and then the heat preservation heat treatment after the billet to form the first titanium billet; The second heat treatment is carried out, and then the first titanium billet after heat preservation is formed into the second titanium billet: after the second titanium billet is cooled to room temperature, the second titanium billet is cold rolled to form the cold rolled billet at room temperature. Titanium targets with fine and uniform grains were obtained by annealing treatment of cold rolled blanks, and then titanium targets were obtained by machine processing. The invention causes solid diffusion of elements in the titanium billet through multiple heat treatment, so as to reduce the non-uniformity of chemical composition distribution, reduce the stratification phenomenon of the target billet, and reduce the grain size; At the same time, it can eliminate residual stress, stabilize size, reduce hardness and brittleness, increase its plasticity, reduce deformation and crack tendency.
Physical Vapor Deposition (PVD) is widely used in optics, electronics, information and other high-end industries, such as integrated circuits, liquid crystal display (LCD), Liquid Crystal Display, industrial glass, camera lens, information storage, shipbuilding, chemical industry, etc. The metal target component used in PVD is one of the most important raw materials in the manufacturing process of integrated circuits and liquid crystal displays. Titanium (Ti) target is a typical metal target, which is widely used in PVD due to its excellent corrosion resistance, electromagnetic shielding performance and energy materials. For example, titanium can be used as decorative and protective coatings on other metal surfaces, and can be produced by vacuum sputtering on titanium targets. Therefore, the internal structure and grain size of the titanium target are the key factors to determine whether the final titanium target assembly can meet the requirements of semiconductor sputtering.
However, in the existing technology, plastic deformation of high purity titanium ingot to achieve the manufacturing of high purity titanium target for semiconductor processing process involves less and is not perfect, so the titanium target produced by forging has been difficult to meet the needs of the current product production.
Titanium particles with purity of 5N were selected, and the titanium particles were fused by vacuum melting at a temperature of 65(TC). The molten soup was cast, and the molten soup was cooled to form ingot billet. The ingot billet is immediately subjected to the first heat treatment, the temperature of the first heat treatment is 500 °C and the time is exactly LH. Then the ingot billet after heat preservation heat treatment is forged by air hammer to form the first titanium billet. The first titanium billet is subjected to a second heat treatment at a temperature of 400. (:, the holding time is 2h, and then the first titanium billet after heat treatment is forged by air hammer to form the second titanium billet; After the second titanium billet is cooled to room temperature, the second titanium billet is cold rolled at room temperature to form cold rolled billet. The cold rolled blank was annealed at 400°C for 2 hours to obtain titanium target blank with fine and uniform grains. The titanium target was then processed by machine tool.
