Diffusion welding of tantalum and copper, aluminum and titanium dissimilar metals. It is a diffusion welding method for tantalum and copper, aluminum and titanium dissimilar metals. The technological process is successively: welding surface polishing treatment, welding surface cleaning, welding material wrapping and vacuuming, hot isostatic pressing treatment. The invention and the existing diffusion welding method of tantalum and other metal materials have three advantages: first, the invention improves the utilization rate of the material; Second: the invention simplifies the production and processing process and improves the production efficiency; Third: the invention is also beneficial to the material recovery after the use of target material, including the utilization rate of recycled tantalum material and the simple recovery method.
With the rapid development of semiconductor technology, the degree of integration is getting higher and higher, the number of integrated devices per unit area of monocrystalline silicon wafer is increasing exponentially, and the size of silicon wafer is getting larger and smaller, and the wiring width is getting finer and finer, so the requirements for the size of sputtering target and the microstructure are getting finer and finer. At present, the frontier of semiconductor technology is 300mm(that is, 12") silicon wafer VLSI manufacturing technology, which is related to the VLSI target manufacturing technology. [0004] At present, the mainstream of the mass and large-scale production of semiconductor integrated circuits in the world is 300mm chip (12 inch) 90nm technology, and 65nm, 45nm, 32nm technology is under development. At present, China's large-scale production is represented by SMIC's 0.13-0.18UM (130-180nm) technology for 200mm wafers. Advanced production line manufacturing technology has been upgraded to 90nm, and the construction of technical production lines and factories below 90nm for 300mm wafers is being promoted. Research and development of 65nm and 45nm manufacturing technology has also started.
As the chip size increases from 200mm(8 in) to 300mm(12 in), the corresponding sputtering target size must be. The line width is reduced from 130-180nm to 90-45nm, based on conductor. And the matching performance of the barrier layer, the sputtering target material will also be transformed from ultra-pure Al/Ti system to ultra-pure Cu/Ta system,
Ta target is becoming more and more important in semiconductor sputtering industry, and its demand is also increasing. After more than 20 years of rapid economic development, China not only attracts foreign manufacturers with low production costs.
At the same time, it has attracted the attention of the global semiconductor industry with huge market demand. China is the rapid development of the semiconductor industry in the world. China is emerging a round of semiconductor factory construction peak. It is estimated that between now and the next few years there will be several. Billions of dollars have been invested in China to build 4", 5", 6", 8" and 12" production lines. Therefore, the demand for sputtering target materials in semiconductor chip manufacturing industry in China and Asia will be very huge.
