A method for preparing a high-purity vanadium target blank and a high-purity vanadium target material produced therefrom, the preparation method comprising: sequentially forging, annealing, rolling, and re-annealing a vanadium ingot to obtain a high-purity vanadium target blank; wherein , the re-annealing temperature is 450-550°C. The preparation method uses the synergistic coupling effect of forging, annealing, rolling and re-annealing, and strictly limits the temperature of re-annealing to 450-550°C. The prepared vanadium target blank not only has a uniform internal structure, but also has the advantage of fine grains , the grain size is ≤50μm, which can basically be controlled in the range of 20-40μm, and the yield rate is as high as 90%.
Magnetron sputtering is one of the main technologies for preparing thin film materials. The ions generated by the ion source are accelerated and gathered in a vacuum to form a high-speed energy ion beam, which bombards the solid surface, and the kinetic energy exchange occurs between the ions and the solid surface atoms. , so that the atoms on the solid surface leave the solid and deposit on the surface of the substrate to form a thin film with a thickness of nanometer or micrometer. Among them, the bombarded solid is the raw material for preparing magnetron sputtering deposited films, generally called sputtering targets, which are concentrated in information storage, integrated circuits, displays, automotive rearview mirrors and other industries.
The sputtering target can be obtained by Thermo Mechanical Processing (TMP), which will improve the structure and properties of the metal material through forging, rolling, heat treatment and annealing, and obtain The required shape and size is a core key technology for sputtering target manufacturing.
Pure gold is generally used as the surface conductive layer in the production of integrated circuits, but gold and silicon wafers are prone to generate AuSi low-melting point compounds, resulting in weak bonding between gold and silicon interfaces. Adhesive layer, pure nickel is commonly used as the adhesive layer, but diffusion will also form between the nickel layer and the gold conductive layer, so a barrier layer is needed to prevent the diffusion between the gold conductive layer and the nickel adhesive layer. The barrier layer needs to use a metal with a high melting point, and it must also withstand a large current density. High-purity metal vanadium can meet this requirement. Vanadium is a silver-gray metal with a density of 6.11g/cm3 and a melting point of 1919±2°C, which belongs to the list of rare metals with high melting points. Pure vanadium has good plasticity and can be rolled into sheets, foils and drawn wires at room temperature. Although vanadium alloy targets have been used in solar energy, flat panel displays, electronics, and semiconductors, such as integrated circuits, backplane metallization, and optoelectronics, there are few reports on the preparation methods of high-purity vanadium targets.
