Thin film transistor (TFT) can reduce the source/drain interconnection resistance, prevent the contamination of the active layer, reduce the contact resistance between the pixel electrode and the source/drain, smoothly supply hydrogen to the active layer and has high mobility, open current characteristics and threshold voltage characteristics. The TFT includes an active layer with a channel zone and a source/drain zone; A gate used to provide signals to the channel area; A source/drain, respectively, connected to a source/drain region, including at least one of titanium, titanium alloy, tantalum and tantalum alloys; An insulating layer sandwiched between the source/drain and the active layer that includes silicon nitride.
The source wood g/ drain consists of a first metal layer pattern, a second metal layer pattern and a third metal layer pattern, which belongs to the layer diagram in the direction of the active layer! l, stack.
The first metal layer pattern includes chromium, chromium alloy, molybdenum and at least one of molybdenum alloys.
The second metallic layer pattern includes at least one of A1, AlSi, AlNd and AlCu.
The third metallic layer pattern includes titanium, titanium alloy, tantalum, and one of tantalum alloys.
The first metal layer pattern includes titanium, titanium alloy, tantalum and one of tantalum alloys.
The TFT further includes a protective layer pattern between the first and second metallic layer patterns.
The protective coating pattern includes at least one of titanium, titanium alloy, tantalum and tantalum alloys.
On the other hand, a flat panel display including a thin film transistor (TFT) is provided, wherein the TFT includes an active layer having a channel region and a source hanging drain region; The gate with < dimension is suitable for lifting to the channel area; The source W drain is respectively connected to the Pengao drain region, and the source flip-pole includes titanium and titanium.
5 At least one of alloys, tantalum and tantalum alloys; Insert source ^A between the drain and the active layer of the rural machinery layer, the packaging silicon.
Including titanium, titanium, tantalum, and tantalum alloys.
